F. Felten, J.P. Senateur, F. Weiss, R. Madar, A. Abrutis. Deposition of oxides layers by computer controlled injection-LPCVD. J. Phys. IV France, 5-C5 (1995) 1079-1086.

F. Felten, J.P. Senateur, M. Labeau, K. Yu-Zhang, A. Abrutis. Deposition of Ta₂O₅/SiO₂ multilayer films by a new process "injection MOCVD". Thin Solid Films. 296 (1997) 79-81.

J. Lindner, F. Weiss, J.P. Senateur, A. Abrutis. YBa₂Cu₃O_7-x /SrTiO₃//LaAlO₃ heterostructures obtained by injection MOCVD. Integrated Ferroelectrics 30 (2000) 301-308.

A. Abrutis, A. Bartasyte, V. Kubilius, A. Teiserskis, P. Baumann, J. Lindner, M. Schumacher, C. Dubourdieu. Growth of Al₂O₃ films by pulsed injection MOCVD: comparative study of precursor materials. Electrochemical Society Proceedings, vol. 2003-8 (2003), p. 771-776. Proceedings of the international conf. “Chemical Vapor Deposition XVI and EUROCVD 14”, Paris, France, April 27- May 2, 2003. The Electrochemical Society, INC, Pennington, USA.

A. Abrutis, A. Bartasyte, A. Teiserskis, Z.Saltyte, P.K. Baumann, M. Schumacher, J. Lindner, T. McEntee. Growth of Pr2O3 layers by pulsed injection MOCVD, in Integration of Advanced Micro- and Nanoelectronic Devices—Critical Issues and Solutions, Mater. Res. Soc. Symp. Proc. 811, Warrendale, PA , 2004, D9.9.

Sergej Pasko, Liliane G. Hubert-Pfalzgraf, Adulfas Abrutis, Philippe Richard, Ausrine Bartasyte, Vida Kazlauskiene. New Hf, Zr and Y -diketonate complexes and their application as MOCVD precursors for oxide films. J. Mater. Chem., 14 (2004) 1245-1251.

A. Abrutis, L.G. Hubert-Pfalzgraf, S.V. Pasko, A. Bartasyte, F. Weiss, V. Janickis. Hafnium oxoneopentoxide as a new MOCVD precursor for hafnium oxide films. J. Cryst. Growth, 267 (2004) 529-537.

S. V. Pasko, A. Abrutis, L. G. Hubert-Pfalzgraf. Hafnium and zirconium tetramethylnonanedionates as new MOCVD precursors for oxide films. Mater.Lett., 59 (2005) 261-265.

S. Pasko, L. G. Hubert-Pfalzgraf, A. Abrutis, Synthesis and characterisation of hafnium tert-butylacetoacetate as new MOCVD precursor for HfO2 films. Mater. Lett., 59 (2005) 1836-1840.

L. G. Hubert-Pfalzgraf, N. Touati, S. V. Pasko, J. Vaissermann, A. Abrutis. Synthesis and characterisation of Hf(thd)₂X₂ derivatives [X = N(SiMe₃)₂, OSiMe₃ and OSitBuMe₂] as precursors for MOCVD of hafnium silicate films. Polyhedron, 24 (2005) 3066-3073.

L.G. Hubert-Pfalzgraf, S. Pasko, N. Touati, A. Abrutis. Novel hafnium precursors for the MOCVD of high K dielectrics. Abstracts of Papers of the American Chemical Society, 227: U1537-U1537 849-INOR Part 1, MAR 28 2004, AMER CHEMICAL SOC, NW, WASHINGTON, DC 20036 USA, ISSN: 0065-7727.

Hubert-Pfalzgrat LG, Pasko S, Abrutis A, Kazlauskiene V. Homo and heterometallic Hf derivatives as mocvd precursors for nanosilicate and nanoaluminate films. Abstracts of Papers of the American Chemical Society. 229: U1106-U1106 919-INOR Part 1, MAR 13 2005, AMER CHEMICAL SOC, NW, WASHINGTON, DC 20036 USA, ISSN: 0065-7727.

A. Abrutis, M. Lukosius, A. Kiziene, P.K. Baumann, M. Schumacher, J. Lindner MOCVD growth and properties of high-k dielectric praseodymium oxides layers on silicon. Electrochemical Society Proceedings, v. 2005-09 (2005) 936-943. The Electrochemical Society, Inc., Pennington, NJ, USA, ISBN 1-56677-427-6. Proc. of EUROCVD15 conf., Bochum, Germany, 5-11 September, 2005.

Liliane Hubert-Pfalzgraf, Sergej Pasko, Adulfas Abrutis. Homo and heterometallic precursors for hafnium oxide based films. Electrochemical Society Proceedings, v. 2005-09 (2005) 960-967. The Electrochemical Society, Inc., Pennington, NJ, USA, ISBN 1-56677-427-6. Proc. of EUROCVD15 conf., Bochum, Germany, 5-11 September, 2005.

L. G. Hubert-Pfalzgraf, A. Abrutis, S. Pasko, N. Touati, D. Luneau. Synthesis and characterization of Hf–Al heterometallic aminoalkoxides as single-source MOCVD precursors for hafnium aluminate films. Polyhedron, 25 (2006) 293-299.

S. Van Elshocht, P. Lehnen, B. Seitzinger, A. Abrutis, C. Adelmann, B. Brijs, M. Caymax, T. Conard, S. De Gendt, A. Franquet, C. Lohe, M. Lukosius, A. Moussa, O. Richard, P. Williams, T. Witters, P. Zimmerman, M. Heyns. Metallorganic chemical vapor deposition of dysprosium scandate high-k layers using mmp-type precursors. Journal of the Electrochemical Society, 153 (2006) F219-F224.

K. Frohlich, R. Luptak, E. Dobrocka, K. Husekova, K. Cico, A. Rosova, M. Lukosius, A. Abrutis, P. Pisecny, J.P. Espinos. Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapor deposition. Materials Science in Semiconductor Processing 9 (2006) 1065-1072.

A. Abrutis, L. G. Hubert-Pfalzgraf, S. Pasko, N. Touati, V. Kazlauskiene. MOCVD growth of HfSixOy films from hafnium -diketonato silylamides and siloxides. Vacuum, 81 (2006) 13-17.

Abrutis A., Lukosius M., Saltyte Z., Galvelis R., Baumann P. K., Schumacher M., Lindner J. Chemical vapour deposition of praseodymium oxide films on silicon: influence of temperature and oxygen pressure, Thin Solid Films 516 (2008) 4758-4764.

G. Lupina, M. Lukosius, C. Wenger, P. Dudek, G. Kozlowski, HJ. Muessig, A. Abrutis, R. Galvelis, T. Katkus, Z. Saltyte, Deposition of BaHfO₃ Dielectric Layers for Microelectronic Applications by Pulsed Liquid Injection MOCVD. Chemical Vapor Deposition,15 (2009) 167.

A. Abrutis, T. Katkus, S. Stanionyte, V. Kubilius, G. Lupina, Ch. Wenger, M. Lukosius, Chemical vapor deposition and characterization of high-k BaHf(1-x)Ti(x)O(3) dielectric layers for microelectronic applications. Journal of Vacuum Science and Technology B, 29 (2011) 01A303.

P. Dudek, R. Schmidt, M. Lukosius, G. Lupina, Ch. Wenger, A. Abrutis, M. Albert, K. Xu, A. Devi, Basic investigation of HfO₂ based metal-insulator-metal diodes, Thin Solid Films, 519 (20011) 5796-5799.

M. Lukosius, C. Baristiran-Kaynak, A. Abrutis, M. Skapas, V. Kubilius, A. Zauner, G. Ruhl, Ch. Wenger, Metal-insulator-metal capacitors with MOCVD grown Ce-Al-O as a dielectric, Microelectronic Engineering, 88 (2011) 1529-1532.

Ch. Wenger, M. Lukosius, T. Blomberg, A. Abrutis, P. Baumann, G. Ruhl, ALD and AVD grown Perovskite-type Dielectrics for Metal-Insulator-Metal Applications, Book Series: ECS Transaction, Atomic Layer Deposition Applications 7, Vol. 41 (2011) 53-61.

C.B. Kaynak, M. Lukosius, B. Tillack, Ch. Wenger, A. Abrutis, M. Skapas, Ce_xAl_yO_z/TiN stack analysis for Metal-Insulator-Metal applications: Effect of annealing and the metal electrode deposition method. Thin Solid Films, 520 (2012) 4518-4522.

M. Lukosius, Ch. Wenger, T. Blomberg, A. Abrutis, G. Lupina, P.K. Baumann, G. Ruhl, Electrical and Morphological Properties of ALD and AVD Grown Perovskite-Type Dielectrics and Their Stacks for Metal-Insulator-Metal Applications, ECS Journal of Solid State Science and Technology, 1 (2012) N1-N5.

A. Abrutis, M. Lukosius, M. Skapas, S. Stanionyte, V. Kubilius, Ch. Wenger, A. Zauner, Metal-organic chemical vapor deposition of high-k dielectric Ce-Al-O layers from various metal-organic precursors for metal-insulator-metal capacitor applications. Thin Solid Films, 536 (2013) 68-73.