HW-CVD is largely used for device-quality silicon-related applications, mainly photovoltaic devices, for research and industrial applications. In HW-CVD, the source gases are decomposed on a hot wire placed at some distance in front of the substrate, which leads to film deposition from highly active species. Typically, high wire temperatures are used (1700-2000 C, with a tungsten, tantalum, or iridium filament) to obtain complete decomposition of metal-organic precursors and evacuation of the formed radicals from the hot wire towards the substrate. However, depending on the material deposited and the precursors used, such a high wire temperature may not be required. Other applications of HW-CVD technique have appeared in recent years, including the deposition of metallic copper and the growth of some oxides (e.g., TiO2 and SnO2).

We modified HW-CVD method and applied it to deposit Ge2S2Te5 and GeTe layers at a wire temperature of 600 C. Recently, our modified HW-CVD method was used for the growth of In2O3-ZnO layers, and for the growth of doped ZnO and Ga2O3 layers, at a wire temperature of <1000 C.

Main modifications of HW-CVD:


Abrutis A., Plausinaitiene V., Skapas M., Wiemer C., Salicio O., Pirovano, A., Varesi E., Rushworth S., Gawelda W., Siegel J. Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications. Chemistry of Materials 20 (2008) 3557-3559.

A. Abrutis, V. Plausinaitiene, M. Skapas, C. Wiemer, W. Gawelda, J. Siegel, S. Rushworth. Hot-wire chemical vapor growth and characterization of crystalline GeTe films. Journal Crystal Growth, 311 (2009) 362-36

W. Gawelda, J. Siegel, C.N. Afonso, V. Plausinaitiene, A. Abrutis, C. Wiemer. Dynamics of laser-induced phase switching in GeTe films.Journal of Applied Physics, 109 (2011), Art. No 123102

R. Fallica, F. Volpe, M. Longo, C. Wiemer, O. Salicio, A. Abrutis. Electronic properties of crystalline Ge1-xSbxTey thin films. Applied Physics Letters, 101 (2012) Art. No 102105.

A.Abrutis, L. Silimavicus, V. Kubilius, T. Murauskas, Z. Saltyte, S. Kuprenaite, V. Plausinaitiene. On the possibility to grow zinc oxide-based transparent conducting oxide films by hot-wire chemical vapor deposition. Journal of Vacuum Science & Technology A, 32 (2014)  020602

A. Abrutis, L. Silimavicius, V. Kubilius, T. Murauskas, Z. Saltyte, V. Plausinaitiene, Doped zinc oxide films grown by hot-wire chemical vapour deposition. Thin Solid Films, 576 (2015) 88-97.