Participation in international projects:

MULTIMETOX FP5 Growth Programme - RTD

Metal Oxide Multilayers Obtained by Cost-Effective New CVD Technologies for Magnetoelectronic Microsystems and Nanotechnologies

 Generic activity MAT Duration: 36 months (01.03.2000-01.03.2003)
 Proposal Reference GTC1-1999-10022 Project Acronym MULTIMETOX
 Contract Reference G5RT-CT-1999-05001 EC Project officer B. TUBBING


Abstract :
  The co-ordinated activities will concentrate on the preparation and investigation of high quality epitaxial films and multilayers of metal oxide(MO) materials. These heterostructures are based on high-Tc superconductors HTSC) and ferromagnetic materials exhibiting high magnetoresistance (CMR), which are of greatest importance for novel magnetoelectronic applications. The films will be obtained by means of innovative chemical vapour deposition (CVD) techniques. Special emphasis will be put in the characterisation of the microstructure of interfaces and the study of the physical properties of the epitaxial heterostructures. The final scientific goal of the project will be to obtain new magnetoelectronic devices, such as spin polarised quasi-particle injection devices, and spin valve devices from the thin heterostructures. The industrial partners within the network will participate in the assessment and the transfer of these technologies to industry. Special interest will be paid to the training and education of young scientists, and to knowledge diffusion through the organisation of three main Seminars and four Workshops on different topics related with the network activities.


COORDINATOR

CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS
INSTITUTO DE CIENCIE DE MATERIALES DE BARCELONA, ICMB
CAMPUS UNIVERSITAT AUTOONOMA DE BARCELONA
08193, BARCELONA, SPAIN

PARTNERS
COUNTRY ORGANISATIONS
SLOVAKIA INSTITUT OF ELECTRICAL ENINEERING, SLOVAK ACADAMY OF SCIENCES, BRATISLAVA
GERMANY AIXTRON AG, AACHEN
SLOVAKIA AREPOC Ltd., BRATISLAVA
LITHUANIA SEMICONDUCTOR PHYSIC INSTITUTE, VILNIUS
SPAIN SOCIEDAD ESPANOLA DE CARBUROS METALICOS, S.A., BARCELONA
LITHUANIA DEPARTMENT OF GENERAL AND INORGANIC CHEMISTRY, VILNIUS UNIVERSITY
PORTUGAL FUNDACAO DA FACULDADE DE CIENCIAS DA UNIVERSIDADE DE LISBOA
FRANCE LABORATOIRE DES MATERIAUX ET GENIE DES PROCEDES, ENSPG-CNRS-UMR 5628, GRENOBLE
POLAND INSTITUTE OF PHYSICS POLISH ACADEMY OF SCIENCES, WARSAW
IRELAND DEPARTMENT OF PHYSICS TRINITY COLLEGE, DUBLIN
PORTUGAL INSTITUTO TECNOLOGICO E NUCLEAR, LISBON
FRANCE JOINT INDUSTRIAL PROCESSORS FOR ELECTRONICS, MEYLAN

CERMOX FP5 Growth Programme - RTD

Advanced Ultra-Thin Ceramic Membranes for Efficient Industrial Processes

Project Reference: G5RD-2000-00351 Contract Type: Cost-sharing contracts
Start Date: 2001-01-01 End Date: 2004-06-30Duration: 42 months


Abstract :
  The proposal aims in development of ultra thin dense ceramic membranes possessing simultaneously high separation selectivity and permeability at T < 900C to be applied to industrially important topics, i.e. high purity 02 production from air, selective catalytic oxidation and CO oxidation in automotive fuel cell environment. Innovative techniques as MOCVD and sol-gel will be used which have already been shown to function in small scale. New industry fields for application of dense membranes are envisaged which will be accompanied with employment creation. The new technique will allow cleaner, eco-efficient processes with reduction of energy costs (e.g. <70 % for pure 02 production), less waste production (e.g. no extra NOx in combustion using pure oxygen instead of air) and supporting European competitiveness (e.g. leadership in fuel car development).


COORDINATOR

KB VERFAHRENS- UND PROZESSTECHNIK
DEGUSSA-HUELS AKTIENGESELLSCHAFT
PAUL-BAUMANN-STRASSE
145764 MARL, GERMANY

PARTNERS
COUNTRY ORGANISATIONS
SPAIN INSTITUTO DE CIENCIA DE MATERIALES DE BARCELONA CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS 08193 BELLATERRA, BARCELONA
FRANCE UPR 5401 - INSTITUT DE RECHERCHES SUR LA CATALYSE CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, LYON
GERMANY INSTITUT FUER OBERFLAECHENTECHNIK UND PLASMATECHNISCHE WERKSTOFFENTWICKLUNG TECHNISCHE UNIVERSITAET BRAUNSCHWEIG
FRANCE UMR5628 - LABORATOIRE DES MATERIAUX ET DU GENIE PHYSIQUE, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, GRENOBLE
UNITED KINGDOM R&D DEPARTMENT INORGTECH LTD
LITHUANIA DEPARTMENT OF GENERAL AND INORGANIC CHEMISTRY, VILNIUS UNIVERSITY
SPAIN DEPARTAMENTO DE INVESTIGACION CORPORATIVA SOCIEDAD ESPANOLA DE CARBUROS METALLICOS SA, BARCELONA
FRANCE JOINT INDUSTRIAL PROCESSORS FOR ELECTRONICS S.A.R.L., MEYLAN

FP4 COPERNICUS PROGRAMME

Functional Thin Films Obtained By New MOCVD Techniques

Contract: IC15-CT96-0735
Duration: 1997.02.01.-2000.02.01.
Project status: succesfully terminated


COORDINATOR

LABORATOIRE DES MATERIAUX ET GENIE PHYSIQUE - LMGP 
ECOLE NATIONALE SUPERIEURE DE PHYSIQUE DE GRENOBLE
INSTITUT NATIONAL POLYTECHNIQUE DE GRENOBLE

PARTNERS
COUNTRY ORGANISATIONS
SPAIN INSTITUTO DE CIENCIA DE MATERIALES DE BARCELONA CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS 08193 BELLATERRA, BARCELONA
FRANCE LABRATOIRE DE CHIMIE MOLECULAIRE UNIVERSITE DE NICE-SOPHIA ANTIPOLIS, NICE
LITHUANIA DEPARTMENT OF GENERAL AND INORGANIC CHEMISTRY VILNIUS UNIVERSITY
SLOVAKIA INSTITUT OF ELECTRICAL ENINEERING, Slovak Acadamy of Sciences, BRATISLAVA
RUSSIA INORGANIC CHEMISTRY DIVISION, CHEMISTRY DEPARTMENT, MOSCOV STATE UNIVERSITY

CHEMAPH FP6 Programme

Priority 2 Information Society Technologies
Specific Targeted Research or Inovation Project

Chemical Vapor Deposition of Chalcogenide Materials For Phase-Change Memories

 Proposal/Contract no. IST-2004-027561
 Start Date: 2006-01-01 End Date: 2008-11-30 Duration: 35 months


COORDINATOR

MDM-INFM NATIONAL LABORATORY, ITALY

PARTNERS
COUNTRY ORGANISATIONS
GERMANY AIXTRON
ITALY ST MICROELECTRONICS
ENGLAND EPICHEM
SPAIN CSIC
LITHUANIA VILNIUS UNIVERSITY

Abstract :
Phase-change memories (PCM) are one of the most promising candidates for next-generation non-volatile memories, having the potential to improve the performance compared to Flash memories as well as to be scalable beyond Flash technology. The project therefore aims at the development of a film manufacturing process based on a chemical-based technique, metal-organic chemical vapor deposition (MOCVD). MOCVD enables the production of thin films with superior quality compared to those obtained by sputtering, especially in terms of conformality, coverage, and stoichiometry control, and allows implementation of phase-change films in nanoelectronic devices. The main phase-change chalcogenide material system that will be investigated is Ge2Sb2Te5 (GST), as it is already the basis of optical storage media and prototype PCM devices. This objective will require extensive studies of the thermochemical properties of a variety of possible precursor materials, and their interactions, and the investigation of the optimal process conditions to achieve desired film properties, such as resistivity, phase-transition temperature, roughness, density. The project also aims at an in-depth characterization of the electrical, optical, structural, chemical, and functional properties of MOCVD-prepared Ge2Sb2Te5 and similar materials, in order to obtain a link between the phase-change switching behaviour and the chemical-structural composition. The scientific knowledge obtained will enable design of higher-performance materials.